T-CWDM R-1550nm BOSA

T-CWDM R-1550nm BOSA
T-CWDM R-1550nm BOSA
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Features
  • High-stability CWDM MQW-DFB laser
  • Built-in monitor photodiode
  • Built-in isolator
  • High Reliability InGaAs PIN
Applications

Optical Communication System

Absolute Maximum Ratings
Parameter Symbol Ratings Unit
Forward Current (LD) If(LD) 150 mA
Reverse Voltage (LD) Vf(LD) 2 V
Operating Current (PD) Ir(PD) 2 mA
Reverse Voltage (PD) Vr(PD) 20 V
Operating Temp. TOP 0 ~+70
Storage Temp. TST -40~+85
Soldering Temp - 260
Soldering Time - 10 S
Optical & Electrical Characteristics
Transmitter
Parameter Symbol Min. Typ Max. Unit Condition
Rated Output Power Pout 2.0 - 3.0 mW Iop=Ith+25 mA,Tc=25°C
Central Wavelength λ Note 2 nm Note 1
Spectrum Width Δλ - 0.5 1 nm CW
Threshold Current Ith - 10 15 mA CW
Slope Efficiency Es 0.08 - - W/A CW,Tc=25℃
0.05 - - W/A CW,Tc=85℃
Side-mode Suppression Ration SMSR 35 40 - dB CW
Operating Current Iop - Ith+45 - mA CW
Tracking Error TE -1.2 - 1.2 dB Iop=Ith+25mA,Tc=0~70℃
Optical isolation Iso 30 - - dB -
Rise and Fall times Tr/Tf - - 0.5 ns CW
Monitor PD Current Im 100 - 1500 uA CW
Monitor PD Dark Current Id - - 100 nA CW
Receiver
Parameter Symbol Min. Typ Max. Unit Condition
Wavelength Range λ 1520 1550 1580 nm CW
Overload P 3 5 - dBm -
Bandwidth BW 2500 - - MHz -
Responsivity R 0.80 0.85 - A/W λ =1550nm
Active Diameter Ad - 75 - um -
Dark Current Id - - 0.5 nA -
Optical isolation Iso 25 - - dB λ =1470,1490,1610nm
Capacitance Ct - 0.7 - Pf -
Response Time Tr - - 0.4 ns -

Note 1. 2.5Gb/s NRZ, pseudo-random, Pb=0.2mW, Ppeak=1.0mW

Note 2. The selected wavelength is available as follow:

Wavelength (nm) (Tl=Tset) (in vacuum) Tolerance(nm)
1271 ±2 or ±3
1291 ±2 or ±3
1311 ±2 or ±3
1331 ±2 or ±3
1351 ±2 or ±3
1371 ±2 or ±3
1391 ±2 or ±3
1411 ±2 or ±3
1431 ±2 or ±3
1451 ±2 or ±3
1471 ±2 or ±3
1491 ±2 or ±3
1511 ±2 or ±3
1531 ±2 or ±3
1551 ±2 or ±3
1571 ±2 or ±3
1591 ±2 or ±3
1611 ±2 or ±3
Package Outline
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