20mw-50mw 1310nm Pulse Laser Diode Manufacturer

20mw-50mw 1310nm Pulse Laser Diode

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Pin Description

The 20mw-50mw 1310nm pulse laser diode uses a DFB chip and features a maximum output power of 60mw. This high performance makes it an ideal pulse laser diode for use in OTDR systems.

Absolute Maximum Ratings

Parameter	Symbol	Min.	Max.	Unit
Pulsed Forward Current	IFP		500	mA
Reverse Voltage	VR		2	V
Reverse Voltage (monitor PD)	VRM		10	V
Reverse Current (monitor PD)	IFPM		2	mA
Operating Temperature	TC	0	60	°C
Storage Temperature	Tstg	-40	85	°C
Lead Soldering Temperature	Tsld		260(10s)	°c
Relative Humidity (Noncoagulable)	RH		85	%

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Forward Voltage	VFP		2.0	2.5	V	IFP = 200 mA, PW = 10μs, Duty = 1%
Threshold Current	Ith		20	35	mA
Optical Output Power From SM Fiber	Pf	20		50	mW	IFP =200 mA, PW = 10μs, Duty = 1%
Center Wavelength	λc	1290	1310	1330	nm	IFP = 200 mA, PW = 10μs, Duty = 1%
Spectral Width	σ			4	nm	RMS (-3 dB)
Rise Time	tr		0.5	2.0	ns	10-90%
Fall Time	tf		0.5	2.0	ns	90-10%
Monitor Current	Im	0.05		2	mA	VRM = 5 V

As an experienced FP pulsed diode laser (for OTDR system) manufacturer and supplier in China, our company also offers 8-10mw 1653.5nm Butterfly Laser Diode for gas detection, butterfly fiber coupled laser diodes, Pin TIA receiver, and more.