635nm Laser Diode Component

635nm Laser Diode Component
635nm Laser Diode Component
635nm Laser Diode Component
635nm Laser Diode Component
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Features
  • MQW 635nm FP LD
  • High output power
  • Low threshold current
  • Built-in InGaAsP monitor PD
  • Wide temperature range operation (Tc= -10 to+65°C)
Applications

Light Source

Absolute Maximum Ratings
Parameter Symbol Value Unit
LD Forward Current IF(LD) 200 mA
LD Reverse Voltage VR(LD) 2 V
PD Forward Current IF(PD) 2 mA
PD Reverse Voltage VR(PD) 25 V
Operating Temperature TOP(LD) -10 ~ +60
Storage Temperature TST -40 ~ +80
Soldering Temperature/Time - 240/10 ℃/S
Optical & Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit
Output Power Po 1 - 20 mW
Operating Current Iop 30 - 140 mA
Operating Voltage Vop - 2.2 2.8 V
Center Wavelength λ 630 635 640 nm
Spectral Width Δλ - - 4 nm
Monitor Current Im 0.1 0.2 0.5 mA
Rise/ Fall Time Tr/Tf - - 0.5 ns
PIN Definition
Drawing
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