650nm Laser Diode Component
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Features
- MQW 650nm FP LD
- High output power
- Low threshold current
- Built-in InGaAsP monitor PD
- Wide temperature range operation (Tc= -10 to+65°C)
Applications
Light source
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| LD Forward Current | IF(LD) | 200 | mA |
| LD Reverse Voltage | VR(LD) | 2 | V |
| PD Forward Current | IF(PD) | 2 | mA |
| PD Reverse Voltage | VR(PD) | 25 | V |
| Operating Temperature | TOP(LD) | -10 ～ +60 | ℃ |
| Storage Temperature | TST | -40 ～ +80 | ℃ |
| Soldering Temperature/Time | - | 240/10 | ℃/S |
Optical & Electrical Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
| Output Power | Po | 1 | - | 20 | mW |
| Operating Current | Iop | 25 | - | 140 | mA |
| Operating Voltage | Vop | - | 2.2 | 2.8 | V |
| Center Wavelength | λ | 640 | 650 | 660 | nm |
| Spectral Width | Δλ | - | - | 4 | nm |
| Monitor Current | Im | 0.1 | 0.2 | 0.5 | mA |
| Rise/ Fall Time | Tr/Tf | - | - | 0.5 | ns |
PIN Definition
Drawing
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