InGaAs APD for OTDR

InGaAs APD for OTDR
InGaAs APD for OTDR
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Features
  • Small dark current
  • Small terminal capacitance
  • High speed response
  • Detecting area size:50um
  • High volt / high multiplication factor
  • Coaxial module with single mode fiber (SM-9/125)
Applications

OTDR system/other sensing probe

Absolute Maximum Ratings
Parameter Symbol Min. Max. Unit
Forward Current IF - 10 mA
Reverse Current IR - 0.5 mA
Operating Case Temp. TC -10 60 °C
Storage Temperature TSTG -40 85 °C
Lead Soldering Temp. TSOL - 260(10s) °C
Relative Humidity RH 0 85 %
Optical & Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Notes
Reverse Breakdown Voltage VBR 50 55 - V ID = 100 μA
Temperature Coefficient of Reverse Breakdown Voltage δ - 0.1 - V/°C -
Dark Current ID 0.2 - 1 nA M = 1, 5V
Multiplied Dark Current IDM - - 5 nA VR = VBR x 0.98, M > 80
Terminal Capacitance Ct - 0.35 - pF -
Multiplication Factor M 80 100 - M 1550nm,Ipo=0.5uw
Cut-off Frequency fC 2.5 - - GHz M = 10
Responsibly S 0.85 0.90 - A/W λ = 1310 nm, M = 1
0.90 0.95 - λ = 1550 nm, M = 1
Optical Return Loss ORL 30 40 - dB SMF
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