PC3X Series IGBT Power Cycling Test System
Environmental chamber for evaluating the reliability of power semiconductor
The IGBT power cycling test system was developed to meet strict reliability requirements for power semiconductor devices used in areas like electric vehicles, renewable energy systems, and industrial drives. It simulates real-world on-off switching cycles of IGBTs, exposing components to repeated power and temperature fluctuations. Throughout testing, it continuously monitors key parameters such as conduction voltage drop, switching losses, and junction temperature variations. At the same time, it assesses potential mechanical issues like solder layer fatigue between the chip and the package. By combining precise control of thermal and electrical stress with detailed measurements, this equipment helps manufacturers evaluate lifespan, optimize designs, and confirm that IGBT devices maintain stable performance and reliability under demanding working conditions.
- Includes an automatic polarity switching function, enabling bidirectional reverse bias testing on dual-die IGBT devices.
- Equipped with an SQ Lite database that logs data in real time and generates current trend graphs, making it easier to track results and analyze performance.
- Supports aging tests for dual-bridge IGBTs, offering independent aging of the upper and lower bridge arms as well as combined series aging modes.
- The software features a configurable device library that allows users to select predefined parameters for each test, reducing the need to re-enter data for similar components.
- Precise power cycling simulation
The IGBT power cycling test setup accurately manages key parameters such as current and voltage waveforms during turn-on and turn-off, along with the frequency of cycling. This makes test conditions highly consistent with how components operate in real applications. - High-precision temperature monitoring and control
Equipped with sensitive temperature sensors to track real-time chip temperature fluctuations. This environmental chamber includes a reliable cooling unit that can replicate diverse thermal dissipation environments.
With precise temperature management, the setup helps analyze how IGBT performance changes under different temperature ranges. It also replicates thermal variations similar to actual use, making it possible to identify early thermal fatigue issues. - Comprehensive performance evaluation
Alongside temperature and power cycling data, the testing equipment simultaneously monitors key performance metrics like on-state voltage drop, switching energy losses, and dv/dt (voltage rise rate).
The combined analysis of these parameters allows for a thorough evaluation of how the IGBT's electrical and thermal characteristics degrade over time.
| Test system | System type | IGBT power cycling test system |
| Model | PC3X | |
| Standard | JESD51-1 | |
| Dimensions | Control cabinet: 160cm(W)×150cm(D)×1850cm(H)； | |
| Test chamber: 101cm(W)×137cm(D)×150cm(H) | ||
| Power requirements | Control cabinet: AC380V/50Hz Test chamber: AC220V/50Hz | |
| Power | Control cabinet: 15kW Test chamber: 5kW | |
| Test power supply | Number of power supply | 3pcs |
| Voltage range | 0~20V | |
| Voltage accuracy | ±1%±5digits | |
| Current range | 1~2000A | |
| Constant current source accuracy | ±1% | |
| Max. power | 40kW | |
| Gate control voltage | -10.00V~ 20.00V | |
| Gate power supply accuracy | ±1%±5digits | |
| Test time | Aging time | 0-9999h |
| Connection time | 1-9999s | |
| Disconnection time | 1-9999s | |
| Test cycle | 1-999999 cycles | |
| Temperature control | Ambient temperature~105℃ Accuracy: ±1% Stability: ±3℃ | |
